Passivation of Si Surfaces by PECVD Aluminum Oxide
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Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates
The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx depos...
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The reduction in electronic recombination losses by the passivation of silicon surfaces is a critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al2O3) nanolayers synthesized by atomic layer deposition (ALD) emerged as a novel solution for the passivation of pand n-type crystalline Si (c-Si) surfaces. Today, high efficiencies have been realized by the implementation of ul...
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A novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thennal SiO? (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 em/s at the L3 O-cm p-typc (l00) silicon surfaee_ Such low S is achieved by the stack cven when the RTO and SiN films "I<ilvldllally yield considerably poorer surface passivation. Critical to ach...
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Efficiencies of large area n-type silicon solar cells with a screen printed rear side aluminum-alloyed emitter are mainly limited by their front surface recombination velocity. The front surface therefore has to be passivated by an effective passivation layer combined with a front surface field (FSF). In this work we investigate the influence of the front surface passivation quality and the bas...
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تاریخ انتشار 2013